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PDC6964Z Datasheet PDF

Potens semiconductor PDC6964Z

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. PDC6964Z
Datasheet PDC6964Z Download
Manufacturer
Potens semiconductor
Description N-Channel MOSFET
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PDC6964Z datasheet page 1 preview

GENERAL DESCRIPTION

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. PPAK3X3 Pin Configuration DDDD SSSG G D S BVDSS 60V RDSON 15m ID 35A

FEATURES

● 60V,35A, RDS(ON) =15mΩ @VGS = 10V
● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available

APPLICATIONS

● Motor Drive
● Power Tools
● LED Lighting
● Quick Charger

ABSOLUTE MAXIMUM RATINGS

Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Singl
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