Potens semiconductor PDC6964Z
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. PPAK3X3 Pin Configuration DDDD SSSG G D S BVDSS 60V RDSON 15m ID 35AFEATURES
● 60V,35A, RDS(ON) =15mΩ @VGS = 10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● Motor Drive● Power Tools
● LED Lighting
● Quick Charger
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Singl