PDC6966AX Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DDDD S SSG BVDSS 60V RDSON 8.2m ID 55A Features - 60V,55A, RDS(ON) =8.2mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - Green Device Available Applications - Networking - Load Switch - LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Single...