PDD03N20 Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 200V RDSON 0.85 Features - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available ID 3A TO252 Pin Configuration Applications - High efficient switched mode power supplies - TV Power - Adapter/charger - Server Power - PV Inverter / UPS Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol Parameter VDS VGS IDM EAS Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Single...