PDD03N65 Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply TO252 Pin Configuration BVDSS 650V RDSON 5.2Ω ID 3A Features - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - High efficient switched mode power supplies - TV Power - Adapter/charger - LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Single Pulse...