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600V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply
TO252 Pin Configuration
D
S G
PDD04N60
BVDSS 600V
RDSON 2.
PDD04N60 Datasheet
