PDD04N60 Datasheet | Potens semiconductor

600V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply TO252 Pin Configuration BVDSS 600V RDSON 2.2Ω ID 4A Features - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - High efficient switched mode power supplies - TV Power - Adapter/charger - Server Power - PV Inverter /...