PDD3964 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

30V,74A, RDS(ON) =4.1mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDD3964 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDD3964
Manufacturer	Potens semiconductor
File Size	602.37 KB
Description	N-Channel MOSFETs
Datasheet	PDD3964 Datasheet

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30V N-Channel MOSFETs PDD3964 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S BVDSS 30V RDSON 4.1m ID 74A Features  30V,74A, RDS(ON) =4.