Datasheet4U Logo Datasheet4U.com

PDEN2309S - P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-3.8A, RDS(ON) =75mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

📥 Download Datasheet

Datasheet preview – PDEN2309S

Datasheet Details

Part number PDEN2309S
Manufacturer Potens semiconductor
File Size 577.76 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDEN2309S Datasheet
Additional preview pages of the PDEN2309S datasheet.

📁 Similar Datasheet

Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
30V P-Channel MOSFETs PDEN2309S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS -30V RDSON 75mΩ ID -3.8A Features  -30V,-3.8A, RDS(ON) =75mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
Published: |