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PDEN2309S - P-Channel MOSFETs

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -30V,-3.8A, RDS(ON) =75mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDEN2309S
Manufacturer Potens semiconductor
File Size 577.76 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDEN2309S Datasheet

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30V P-Channel MOSFETs PDEN2309S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS -30V RDSON 75mΩ ID -3.8A Features  -30V,-3.8A, RDS(ON) =75mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.