PDEN2319S Datasheet | Potens semiconductor

Preliminary datasheet 20V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-S Pin Configuration BVDSS -20V RDSON 600m ID -1A Features - -20V,-1A, RDS(ON) =600mΩ@VGS = -4.5V - Improved dv/dt capability - Fast switching - Green Device Available - Suit for -1.5V Gate Drive Applications Applications - Notebook - Load Switch - Battery Protection - Hand-held...