PDEN2320S Datasheet | Potens semiconductor

Preliminary datasheet 20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration BVDSS 20V RDSON 300m ID 1.45A Features - 20V,1.45A, RDS(ON) =300mΩ@VGS = 4.5V - Improved dv/dt capability - Fast switching - Green Device Available - Suit for 1.5V Gate Drive Applications Applications - Notebook - Load Switch - Battery Protection - Hand-held...