PDEN2320S - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

20V,1.45A, RDS(ON) =300mΩ@VGS = 4.5V.
Improved dv/dt capability.
Fast switching.
Green Device Available.
Suit for 1.5V Gate Drive.

Potens semiconductor

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Datasheet Details

Part number	PDEN2320S
Manufacturer	Potens semiconductor
File Size	843.38 KB
Description	N-Channel MOSFETs
Datasheet	PDEN2320S Datasheet
Additional preview pages of the PDEN2320S datasheet.

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Preliminary datasheet 20V N-Channel MOSFETs PDEN2320S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS 20V RDSON 300m ID 1.45A Features  20V,1.45A, RDS(ON) =300mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.

Published: Aug 18, 2018 |