PDEV2120Y datasheet by Potens semiconductor.
| Part number | PDEV2120Y |
|---|---|
| Datasheet | PDEV2120Y-Potenssemiconductor.pdf |
| File Size | 936.60 KB |
| Manufacturer | Potens semiconductor |
| Description | Dual P+N Channel MOSFETs |
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These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
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