PDEW2206 Overview
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 20V, 10A, RDS(ON)=9mΩ@VGS=4.5V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- Suit for 1.8V Gate Drive Applications
