PDF03N60 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available ID 3A TO220F Pin Configuration GDS.

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PDF03N60 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDF03N60
Manufacturer	Potens semiconductor
File Size	531.98 KB
Description	N-Channel MOSFETs
Datasheet	PDF03N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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600V N-Channel MOSFETs PDF03N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 650V RDSON 4.