PDF04N65L Description
These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 650V RDSON 2.6.
PDF04N65L Key Features
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available