PDF04N65L
Overview
These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available ID 4A TO126 Pin Configuration
- GDS G S
