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PDF0903 - P-Channel MOSFETs

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -100V,-10A, RDS(ON) 140mΩ@VGS = -10V.
  • VGS Guarantee ± 25V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number PDF0903
Manufacturer Potens semiconductor
File Size 648.99 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDF0903 Datasheet
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100V P-Channel MOSFETs PDF0903 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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