PDF0903 Overview
Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 100V,-10A, RDS(ON) 140mΩ@VGS = -10V
- VGS Guarantee ± 25V
- Improved dv/dt capability
- Fast switching
- Green Device Available
