Datasheet Details
| Part number | PDF0903 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 648.99 KB |
| Description | P-Channel MOSFETs |
| Datasheet |
 PDF0903 Datasheet
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General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- -100V,-10A, RDS(ON) 140mΩ@VGS = -10V.
- VGS Guarantee ± 25V.
- Improved dv/dt capability.
- Fast switching.
- Green Device Available.