Datasheet Details
| Part number | PDF0980 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 681.63 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
 PDF0980 Datasheet
|
|
|
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 100V,85A, RDS(ON) =4.4mΩ@VGS = 10V.
- Improved dv/dt capability.
- Fast switching.
- 100% EAS Guaranteed.
- Green Device Available.