Datasheet4U Logo Datasheet4U.com

PDF09N50 - N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

📥 Download Datasheet

Datasheet Details

Part number PDF09N50
Manufacturer Potens semiconductor
File Size 564.41 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDF09N50 Datasheet

Full PDF Text Transcription for PDF09N50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PDF09N50. For precise diagrams, and layout, please refer to the original PDF.

500V N-Channel MOSFETs PDF09N50 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced techno...

View more extracted text
ect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220F Pin Configuration S GD BVDSS 500V RDSON 0.