Potens semiconductor PDF09N50
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDF09N50 |
|---|---|
| Datasheet | PDF09N50 Download |
| Manufacturer |  Potens semiconductor |
| Description | N-Channel MOSFETs |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. TO220F Pin Configuration S GD BVDSS 500V RDSON 0.75 ID 9AFEATURES
● Improved dv/dt capability● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● High efficient switched mode power supplies● TV Power
● Adapter/charger
● Server Power
● PV Inverter / UPS
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Singl
