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PDF09N60 - N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available ID 9A TO220F Pin Configuration D G GDS S.

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Datasheet Details

Part number PDF09N60
Manufacturer Potens semiconductor
File Size 550.13 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDF09N60 Datasheet

Full PDF Text Transcription for PDF09N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PDF09N60. For precise diagrams, and layout, please refer to the original PDF.

600V N-Channel MOSFETs PDF09N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced tech...

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ect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 600V RDSON 1.