PDH0970 Datasheet | Potens semiconductor

100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. TO263 Pin Configuration BVDSS 100V RDSON 3.6m ID 190A Features - 100V,190A, RDS(ON) =3.6mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - Networking - Load Switch - LED...