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PDH0970 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V,190A, RDS(ON) =3.6mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PDH0970

Datasheet Details

Part number PDH0970
Manufacturer Potens semiconductor
File Size 783.71 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDH0970 Datasheet
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Full PDF Text Transcription

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100V N-Channel MOSFETs PDH0970 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO263 Pin Configuration G S D G D S BVDSS 100V RDSON 3.6m ID 190A Features  100V,190A, RDS(ON) =3.
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