Datasheet4U Logo Datasheet4U.com

PDH3902 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

avalaDnche and commutation mode.

Features

  • 30V, 200A, RDS(ON) =2.1mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

📥 Download Datasheet

Datasheet preview – PDH3902

Datasheet Details

Part number PDH3902
Manufacturer Potens semiconductor
File Size 370.00 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDH3902 Datasheet
Additional preview pages of the PDH3902 datasheet.

📁 Similar Datasheet

  • PDH3012 - (PDH3012 / PDH3016) THYRISTOR MODULE (Nihon Inter Electronics)
  • PDH3016 - (PDH3012 / PDH3016) THYRISTOR MODULE (Nihon Inter Electronics)
  • PDH308 - THYRISTOR MODULE (Nihon Inter Electronics)
  • PDH10012 - (PDH10012 / PDH10016) THYRISTOR MODULE (Nihon Inter Electronics)
  • PDH10016 - (PDH10012 / PDH10016) THYRISTOR MODULE (Nihon Inter Electronics)
  • PDH1008 - THYRISTOR (KYOCERA)
  • PDH1008 - THYRISTOR MODULE (Nihon Inter Electronics)
  • PDH15012 - (PDH15012 / PDH15016) THYRISTOR MODULE (Nihon Inter Electronics)
  • PDH15016 - (PDH15012 / PDH15016) THYRISTOR MODULE (Nihon Inter Electronics)
  • PDH1508 - THYRISTOR (Nihon Inter)
Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalaDnche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO263 Pin Configuration D S G G D S S PDH3902 BVDSS 30V RDSON 2.1m ID 200A Features  30V, 200A, RDS(ON) =2.
Published: |