PDH3902 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

avalaDnche and commutation mode.

Key Features

30V, 200A, RDS(ON) =2.1mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDH3902 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDH3902
Manufacturer	Potens semiconductor
File Size	370.00 KB
Description	N-Channel MOSFETs
Datasheet	PDH3902 Datasheet

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30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalaDnche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO263 Pin Configuration D S G G D S S PDH3902 BVDSS 30V RDSON 2.1m ID 200A Features  30V, 200A, RDS(ON) =2.