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PDH4960 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V, 150A, RDS(ON) =3.8mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number PDH4960
Manufacturer Potens semiconductor
File Size 398.73 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDH4960 Datasheet
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40V N-Channel MOSFETs PDH4960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO263 Pin Configuration D D SG G S BVDSS 40V RDSON 3.8m ID 150A Features  40V, 150A, RDS(ON) =3.
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