PDH4960 Datasheet | Potens semiconductor

40V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. TO263 Pin Configuration SG G BVDSS 40V RDSON 3.8m ID 150A Features - 40V, 150A, RDS(ON) =3.8mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - Green Device Available Applications - MB / VGA / Vcore - POL Applications - SMPS 2nd...