PDP0903 - P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

-100V,-24A, RDS(ON) 95mΩ@VGS = -10V.
VGS Guarantee ± 25V.
Improved dv/dt capability.
Fast switching.
Green Device Available.

Potens semiconductor

📥 Download Datasheet

Datasheet Details

Part number	PDP0903
Manufacturer	Potens semiconductor
File Size	743.55 KB
Description	P-Channel MOSFETs
Datasheet	PDP0903 Datasheet
Additional preview pages of the PDP0903 datasheet.

📁 Similar Datasheet

PDP-428XG - (PDP-428XG / PDP-508XG) PLASMA TELEVISION (Pioneer)
PDP-433PE - Service manual (Pioneer)
PDP-433PU - Service manual (Pioneer)
PDP-501MX - PLASMA DISPLAY Service Manual (Pioneer)
PDP-508XG - (PDP-428XG / PDP-508XG) PLASMA TELEVISION (Pioneer)
PDP-V402 - Display Tech Manual (Pioneer)
PDP-V402 - Display (Pioneer)
PDP-V402E - Display Tech Manual (Pioneer)
PDP-V402E - Display (Pioneer)
PDP42C4 - WXGA PDP MODULE (LG)

Other Datasheets by Potens semiconductor

PDP0902 - N-Channel MOSFETs
PDP0904 - N-Channel MOSFETs
PDP0905 - P-Channel MOSFETs
PDP0959 - P-Channel MOSFETs
PDP0966 - N-Channel MOSFETs
PDP0966A - N-Channel MOSFETs
PDP0970 - N-Channel MOSFET
PDP0974 - N-Channel MOSFETs

Full PDF Text Transcription

Click to expand full text

100V P-Channel MOSFETs PDP0903 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Published: Aug 20, 2018 |