PDP0905 - P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

-100V,-10A, RDS(ON) 210mΩ@VGS = -10V.
Improved dv/dt capability.
Fast switching.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDP0905
Manufacturer	Potens semiconductor
File Size	677.14 KB
Description	P-Channel MOSFETs
Datasheet	PDP0905 Datasheet
Additional preview pages of the PDP0905 datasheet.

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Full PDF Text Transcription

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100V P-Channel MOSFETs PDP0905 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Published: Aug 20, 2018 |