PDP3902 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

avalaDnche and commutation mode.

Features

30V, 200A, RDS(ON) =2.1mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDP3902
Manufacturer	Potens semiconductor
File Size	433.42 KB
Description	N-Channel MOSFETs
Datasheet	PDP3902 Datasheet
Additional preview pages of the PDP3902 datasheet.

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Full PDF Text Transcription

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30V N-Channel MOSFETs PDP3902 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalaDnche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration G D S GDS S BVDSS 30V RDSON 2.1m ID 200A Features  30V, 200A, RDS(ON) =2.

Published: Aug 20, 2018 |