Datasheet4U Logo Datasheet4U.com

PDP3903 - P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-75A, RDS(ON) =9mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

📥 Download Datasheet

Datasheet preview – PDP3903

Datasheet Details

Part number PDP3903
Manufacturer Potens semiconductor
File Size 786.23 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDP3903 Datasheet
Additional preview pages of the PDP3903 datasheet.

📁 Similar Datasheet

Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
30V P-Channel MOSFETs PDP3903 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D GD S G S BVDSS -30V RDSON 9m ID -75A Features  -30V,-75A, RDS(ON) =9mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
Published: |