Potens semiconductor PDP4902
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalaDnche and commutation mode. These devices are well suited for high efficiency fast switching applications.GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. TO220 Pin Configuration G D S GDS S BVDSS 40V RDSON 2.5m ID 160AFEATURES
● 40V, 160A, RDS(ON) =2.5mΩ@VGS = 10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● MB / VGA / Server Vcore● POL
APPLICATIONS
● SMPS 2nd SR● BMS System
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) (Chip Limitation) Drain Current – Continuous (TC=100℃) (C