PDP4902 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

avalaDnche and commutation mode.

Features

40V, 160A, RDS(ON) =2.5mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDP4902
Manufacturer	Potens semiconductor
File Size	434.79 KB
Description	N-Channel MOSFETs
Datasheet	PDP4902 Datasheet
Additional preview pages of the PDP4902 datasheet.

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40V N-Channel MOSFETs PDP4902 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalaDnche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration G D S GDS S BVDSS 40V RDSON 2.5m ID 160A Features  40V, 160A, RDS(ON) =2.

Published: Aug 20, 2018 |