PDP4903 - P-Channel MOSFETs

Potens semiconductor

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-40V,-55A, RDS(ON) =15mΩ@VGS = -10V.
Fast switching.
Green Device Available.
Suit for -4.5V Gate Drive.

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PDP4903 p-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDP4903
Manufacturer	Potens semiconductor
File Size	429.35 KB
Description	P-Channel MOSFETs
Datasheet	PDP4903 Datasheet

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40V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D G PDP4903 BVDSS -40V RDSON 15m ID -55A Features  -40V,-55A, RDS(ON) =15mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.