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PDP6901 - P-Channel MOSFETs

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -60V,-75A, RDS(ON) 9.5mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – PDP6901

Datasheet Details

Part number PDP6901
Manufacturer Potens semiconductor
File Size 807.73 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDP6901 Datasheet
Additional preview pages of the PDP6901 datasheet.

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Full PDF Text Transcription

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60V P-Channel MOSFETs PDP6901 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D G BVDSS -60V RDSON 9.5m ID -75A Features  -60V,-75A, RDS(ON) 9.5mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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