PDP6901 - P-Channel MOSFETs

Potens semiconductor

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-60V,-75A, RDS(ON) 9.5mΩ@VGS = -10V.
Fast switching.
Green Device Available.
Suit for -4.5V Gate Drive.

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PDP6901 p-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDP6901
Manufacturer	Potens semiconductor
File Size	807.73 KB
Description	P-Channel MOSFETs
Datasheet	PDP6901 Datasheet

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60V P-Channel MOSFETs PDP6901 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D G BVDSS -60V RDSON 9.5m ID -75A Features  -60V,-75A, RDS(ON) 9.5mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.