Potens semiconductor PDP6902
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. TO220 Pin Configuration D S GD G S BVDSS 60V RDSON 4.5m ID 114AFEATURES
● 60V,114A, RDS(ON) =4.5mΩ@VGS = 10V● Improved dv/dt capability
● Fast switching
● Green Device Available
APPLICATIONS
● PowerTools● Quick Charger
● LED applications
● Motor Drive
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Ava