Datasheet Details
| Part number | PDQ2215 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 604.75 KB |
| Description | Dual P-Channel MOSFETs |
| Datasheet |
 PDQ2215 Datasheet
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General Description
These dual P Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- -20V, -3A, RDS(ON) =85mΩ@VGS = -4.5V.
- Improved dv/dt capability.
- Fast switching.
- Green Device Available.
- Suit for -1.8V Gate Drive.