Datasheet Details
| Part number | PDQ2218 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 918.52 KB |
| Description | Dual N-Channel MOSFETs |
| Datasheet |
 PDQ2218 Datasheet
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General Description
These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 20V, 3.6A, RDS(ON) =60mΩ@VGS = 4.5V.
- Improved dv/dt capability.
- Fast switching.
- Green Device Available.
- Suit for 1.8V Gate Drive.