Datasheet Summary
40V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
TO251 Pin Configuration
G DS
BVDSS 40V
RDSON 8.5m
ID 50A
Features
- 40V, 50A, RDS(ON)=8.5mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
Applications
- Notebook
- Load Switch
- LED applications
- Hand-Held...