Datasheet Details
| Part number | PDR4906 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 457.23 KB |
| Description | N-Channel MOSFETs |
| Download | PDR4906 Download (PDF) |
|
|
| Part number | PDR4906 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 457.23 KB |
| Description | N-Channel MOSFETs |
| Download | PDR4906 Download (PDF) |
|
|
|
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
40V N-Channel MOSFETs PDR4906 General.
| Part Number | Description |
|---|---|
| PDR01N50 | N-Channel MOSFETs |
| PDR01N60 | N-Channel MOSFETs |
| PDR01N65 | N-Channel MOSFETs |
| PDR02N50 | N-Channel MOSFETs |
| PDR02N65 | N-Channel MOSFETs |
| PDR03N50 | N-Channel MOSFETs |
| PDR03N60 | N-Channel MOSFETs |
| PDR03N65 | N-Channel MOSFETs |
| PDR04N50 | N-Channel MOSFETs |
| PDR04N60 | N-Channel MOSFETs |