PDS6904-5 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

65V,16.7A, RDS(ON) =14mΩ @VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDS6904-5
Manufacturer	Potens semiconductor
File Size	785.61 KB
Description	N-Channel MOSFETs
Datasheet	PDS6904-5 Datasheet
Additional preview pages of the PDS6904-5 datasheet.

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Full PDF Text Transcription

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65V N-Channel MOSFETs PDS6904-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D SS SG G D S BVDSS 65V RDSON 14m ID 16.7A Features  65V,16.

Published: Aug 18, 2018 |