PDV3916Z Overview
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 30V,2.1A , RDS(ON)=40mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- Green Device Available SOT363 D DS G DD G D S
