PDV3916Z - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

30V,2.1A , RDS(ON)=40mΩ@VGS=10V.
Improved dv/dt capability.
Fast switching.
Green Device Available SOT363 Pin Configuration D DS G DD G D S.

Potens semiconductor

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Datasheet Details

Part number	PDV3916Z
Manufacturer	Potens semiconductor
File Size	818.34 KB
Description	N-Channel MOSFETs
Datasheet	PDV3916Z Datasheet
Additional preview pages of the PDV3916Z datasheet.

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Preliminary datasheet 30V N-Channel MOSFETs PDV3916Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 30V RDSON 40m ID 2.1A Features  30V,2.

Published: Aug 20, 2018 |