Datasheet Summary
100V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
TO247 Pin Configuration
BVDSS 100V
RDSON 4 m
ID 170A
Features
- 100V,170A, RDS(ON) =4mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
- Networking
- Load Switch
- LED applications
-...