PDX8970 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

80V,250A, RDS(ON) =2.6mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDX8970 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDX8970
Manufacturer	Potens semiconductor
File Size	882.12 KB
Description	N-Channel MOSFETs
Datasheet	PDX8970 Datasheet

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80V N-Channel MOSFETs PDX8970 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO247 Pin Configuration D S GD G S BVDSS 80V RDSON 2.6m ID 250A Features  80V,250A, RDS(ON) =2.