PJD04N60D Overview
These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply TO252 D D S G G S BVDSS RDSON ID 600V 1.2.
PJD04N60D Key Features
- 4A,600V, RDS(ON) =1.2Ω@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available