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PJD04N60D - N-Channel MOSFETS

General Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 4A,600V, RDS(ON) =1.2Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PJD04N60D
Manufacturer Potens semiconductor
File Size 713.76 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJD04N60D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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600V N-Channel MOSFETS PJD04N60D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO252 Pin Configuration D D S G G S BVDSS RDSON ID 600V 1.2 4A Features  4A,600V, RDS(ON) =1.