PJF17N80T Datasheet | Potens semiconductor

800V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. TO220F Pin Configuration BVDSS 800V RDSON 0.35 ID 17A Features - 800V,17A, RDS(ON) =0.35Ω@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - High efficient switched mode power...