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PJF17N80T - N-Channel MOSFETS

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 800V,17A, RDS(ON) =0.35Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PJF17N80T

Datasheet Details

Part number PJF17N80T
Manufacturer Potens semiconductor
File Size 788.14 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJF17N80T Datasheet
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Full PDF Text Transcription

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800V N-Channel MOSFETs PJF17N80T General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220F Pin Configuration D S D G G S BVDSS 800V RDSON 0.35 ID 17A Features  800V,17A, RDS(ON) =0.
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