PJF20N70T - N-Channel MOSFETS

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

20A,700V, RDS(ON) =0.19Ω@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PJF20N70T n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PJF20N70T
Manufacturer	Potens semiconductor
File Size	645.26 KB
Description	N-Channel MOSFETS
Datasheet	PJF20N70T Datasheet

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700V N-Channel MOSFETS PJF20N70T General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration D G DS G S BVDSS 700V RDSON 0.19 ID 20A Features  20A,700V, RDS(ON) =0.