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PJF21N50T - N-Channel MOSFETS

Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 21A,500V, RDS(ON) =0.22Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PJF21N50T

Datasheet Details

Part number PJF21N50T
Manufacturer Potens semiconductor
File Size 770.82 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJF21N50T Datasheet
Additional preview pages of the PJF21N50T datasheet.

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Full PDF Text Transcription

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Preliminary datasheet 500V N-Channel MOSFETS PJF21N50T General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration D S GD G S BVDSS 500V RDSON 0.22 ID 21A Features  21A,500V, RDS(ON) =0.
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