PJF21N50T Datasheet | Potens semiconductor

Preliminary datasheet 500V N-Channel MOSFETS General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration S GD BVDSS 500V RDSON 0.22 ID 21A Features - 21A,500V, RDS(ON) =0.22Ω@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - High efficient...