PJF21N50T - N-Channel MOSFETS

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

21A,500V, RDS(ON) =0.22Ω@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PJF21N50T n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PJF21N50T
Manufacturer	Potens semiconductor
File Size	770.82 KB
Description	N-Channel MOSFETS
Datasheet	PJF21N50T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary datasheet 500V N-Channel MOSFETS PJF21N50T General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration D S GD G S BVDSS 500V RDSON 0.22 ID 21A Features  21A,500V, RDS(ON) =0.