PMC4998X - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

40V,200A, RDS(ON) =1.4mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PMC4998X
Manufacturer	Potens semiconductor
File Size	867.90 KB
Description	N-Channel MOSFET
Datasheet	PMC4998X Datasheet
Additional preview pages of the PMC4998X datasheet.

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PMC4996X - N-Channel MOSFETs

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40V N-Channel MOSFETs PMC4998X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DDDD S SSG G D S BVDSS 40V RDSON 1.4m ID 200A Features  40V,200A, RDS(ON) =1.

Published: Aug 8, 2018 |