PMD03N80R - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Key Features

Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available ID 3A TO252 Pin Configuration D S G.

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PMD03N80R n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PMD03N80R
Manufacturer	Potens semiconductor
File Size	506.08 KB
Description	N-Channel MOSFETs
Datasheet	PMD03N80R Datasheet

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800V N-Channel MOSFETs PMD03N80R General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 800V RDSON 4.