Datasheet Summary
20V Dual N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
DFN2x3 Dual Pin Configuration
D1/D2
G1 G2
BVDSS 20V
RDSON 8.2m
ID 11A
Features
- 20V,11A, RDS(ON) =8.2mΩ @VGS = 4.5V
- Improved dv/dt capability
- Fast switching
- G-S ESD Protection Diode Embedded
- Green Device Available
Applications
- Handheld Instruments
-...