Datasheet Details
| Part number | PMEN0998S |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 425.07 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
 PMEN0998S Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 100V,0.2A, RDS(ON) =6Ω@VGS=10V.
- Improved dv/dt capability.
- Fast switching.
- Green Device Available.
- G-S ESD Protection Diode Embedded.