Datasheet Summary
20V P-Channel MOSFETs
General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
BVDSS RDSON
-20V
43mΩ
-4A
- -20V,-4A, RDS(ON) =43mΩ@VGS = -4.5V
- Low gate charge (typicalQ gd 4.5nC)
- G-S ESD Protection Diode Embedded
- Fast switching
- Green Device Available
- Suit for -1.8V Gate Drive...