Datasheet Summary
60V P-Channel MOSFETs
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
BVDSS -60V
RDSON 4
ID -0.3A
Features
- -60V,-0.3A, RDS(ON) =4Ω@VGS=-10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- G-S ESD Protection Diode Embedded
D Applications
- Power Management in Notebook...