Datasheet Summary
1000V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply
TO220F Pin Configuration
BVDSS 1000V
RDSON 5.5
ID 4A
Features
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
- High efficient switched mode power supplies
- TV Power
- Adapter/charger
-...