PMF09N60M - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

600V,9A, RDS(ON) =1.0Ω@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

📥 Download Datasheet

PMF09N60M n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PMF09N60M
Manufacturer	Potens semiconductor
File Size	729.59 KB
Description	N-Channel MOSFETs
Datasheet	PMF09N60M Datasheet

More Datasheets from Potens semiconductor

Part Number	Description
PMF09N65M	N-Channel MOSFETs
PMF09N50M	N-Channel MOSFETs
PMF02N65M	N-Channel MOSFETs
PMF03N80R	N-Channel MOSFETs
PMF04N100T	N-Channel MOSFETs
PMF04N65M	N-Channel MOSFETs
PMF05N50M	N-Channel MOSFETs
PMF08N60M	N-Channel MOSFETs
PMF08N65M	N-Channel MOSFETs
PMF08N70M	N-Channel MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

600V N-Channel MOSFETs PMF09N60M General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration D S GD G S BVDSS 600V RDSON 1.0 ID 9A Features  600V,9A, RDS(ON) =1.