PMF09N60M Overview
These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply TO220F D S GD G S BVDSS 600V RDSON 1.0 ID.
PMF09N60M Key Features
- 600V,9A, RDS(ON) =1.0Ω@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available