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PMP09N60M - N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 600V,9A, RDS(ON) =1.0Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PMP09N60M
Manufacturer Potens semiconductor
File Size 697.16 KB
Description N-Channel MOSFETs
Datasheet download datasheet PMP09N60M Datasheet

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Full PDF Text Transcription (Reference)

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600V N-Channel MOSFETs PMP09N60M General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220 Pin Configuration D GDS G S BVDSS 600V RDSON 1.0 ID 9A Features  600V,9A, RDS(ON) =1.