Datasheet4U Logo Datasheet4U.com

PMP10N60M - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available ID 10A TO220 Pin Configuration GDS.

📥 Download Datasheet

Datasheet preview – PMP10N60M

Datasheet Details

Part number PMP10N60M
Manufacturer Potens semiconductor
File Size 592.45 KB
Description N-Channel MOSFETs
Datasheet download datasheet PMP10N60M Datasheet
Additional preview pages of the PMP10N60M datasheet.

📁 Similar Datasheet

  • PMP1000 - (PMP1000 - PMP5000) EUROPOWER User Manual (BEHRINGER)
  • PMP3000 - (PMP1000 - PMP5000) EUROPOWER User Manual (BEHRINGER)
  • PMP3906AYS - 200mA PNP/PNP matched double transistor (nexperia)
  • PMP4201G - NPN/NPN matched double transistors (NXP)
  • PMP4201V - NPN/NPN matched double transistors (NXP)
  • PMP4201Y - NPN/NPN matched double transistors (NXP)
  • PMP4501G - NPN/NPN matched double transistors (NXP)
  • PMP4501QAS - 100mA NPN/NPN matched double transistors (nexperia)
  • PMP4501V - NPN/NPN matched double transistors (NXP)
  • PMP4501Y - NPN/NPN matched double transistors (NXP)
Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
600V N-Channel MOSFETs PMP10N60M General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 600V RDSON 0.
Published: |