PMR04N65M Datasheet | Potens semiconductor

650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 650V RDSON 2.6 Features - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available ID 4A TO251 Pin Configuration G DS Applications - High efficient switched mode power supplies - TV Power - Adapter/charger - Server...